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Polymer-derived ceramics (PDCs) which are fabricated through pyrolysis of preceramic polymers have attracted increasing attention due to their versatility in structure architecture design and property tailoring. Shaping at the polymer state using 3D printing allows the final ceramic products to exhibit arbitrary shapes and complex architectures that are otherwise impossible to achieve through traditional processing routes. The polymer-to-ceramic phase transition also provides additional space for mechanical property tailoring. A multiscale computational model is developed to explore the phase transition mechanisms and their correlations with processing parameters and failure response. Calculations in this work concern PMHS/DVB preceramic polymers. Molecular dynamics (MD) simulations are carried out first to track the atomic structure evolution at different temperatures. Continuum-scale ceramic phase formation is calculated on the basis of the competition between gas generation and gas diffusion. The effect of processing parameters on mechanical properties of pyrolyzed PMHS/DVB is systematically studied. Conclusions from this study can provide direct guidance for fabricating PDC composites with tailored mechanical properties. 

Abstract Atomically thin transition metal dichalcogenides (TMDs), like MoS 2 with high carrier mobilities and tunable electron dispersions, are unique active material candidates for next generation opto-electronic devices. Previous studies on ion irradiation show great potential applications when applied to two-dimensional (2D) materials, yet have been limited to micron size exfoliated flakes or smaller. To demonstrate the scalability of this method for industrial applications, we report the application of relatively low power (50 keV) 4 He + ion irradiation towards tuning the optoelectronic properties of an epitaxially grown continuous film of MoS 2 at the wafer scale, and demonstrate that precise manipulation of atomistic defects can be achieved in TMD films using ion implanters. The effect of 4 He + ion fluence on the PL and Raman signatures of the irradiated film provides new insights into the type and concentration of defects formed in the MoS 2 lattice, which are quantified through ion beam analysis. PL and Raman spectroscopy indicate that point defects are generated without causing disruption to the underlying lattice structure of the 2D films and hence, this technique can prove to be an effective way to achieve defect-mediated control over the opto-electronic properties of MoS 2 and other 2D materials. 

Anisotropic photonic materials with linear dichroism are crucial components in many sensing, imaging, and communication applications. Such materials play an important role as polarizers, filters, and waveplates in photonic devices and circuits. Conventional crystalline materials with optical anisotropy typically show unidirectional linear dichroism over a broad wavelength range. The linear dichroism conversion phenomenon has not been observed in crystalline materials. The investigation of the unique linear dichroism conversion phenomenon in quasi‐1D hexagonal perovskite chalcogenide BaTiS₃is reported. This material shows a record level of optical anisotropy within the visible wavelength range. In contrast to conventional anisotropic optical materials, the linear dichroism polarity in BaTiS₃makes an orthogonal change at an optical wavelength corresponding to the photon energy of 1.78 eV. First‐principles calculations reveal that this anomalous linear dichroism conversion behavior originates from the different selection rules of the parallel energy bands in the BaTiS₃material. Wavelength‐dependent polarized Raman spectroscopy further confirms this phenomenon. Such a material, with linear dichroism conversion properties, could facilitate the sensing and control of the energy and polarization of light, and lead to novel photonic devices such as polarization‐wavelength selective detectors and lasers for multispectral imaging, sensing, and optical communication applications.

 

The morphology and dimension of the conductive filament formed in a memristive device are strongly influenced by the thickness of its switching medium layer. Aggressive scaling of this active layer thickness is critical toward reducing the operating current, voltage, and energy consumption in filamentary‐type memristors. Previously, the thickness of this filament layer has been limited to above a few nanometers due to processing constraints, making it challenging to further suppress the on‐state current and the switching voltage. Here, the formation of conductive filaments in a material medium with sub‐nanometer thickness formed through the oxidation of atomically thin two‐dimensional boron nitride is studied. The resulting memristive device exhibits sub‐nanometer filamentary switching with sub‐pA operation current and femtojoule per bit energy consumption. Furthermore, by confining the filament to the atomic scale, current switching characteristics are observed that are distinct from that in thicker medium due to the profoundly different atomic kinetics. The filament morphology in such an aggressively scaled memristive device is also theoretically explored. These ultralow energy devices are promising for realizing femtojoule and sub‐femtojoule electronic computation, which can be attractive for applications in a wide range of electronics systems that desire ultralow power operation.